DSASW00135407.pdf

Partial File Text PROCESS CP359R Small Signal MOSFET N-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 9.1 x 9.1 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 2.5 MILS DIAM
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

DSASW00135407.pdf preview

Download Datasheet

User Tagged Keywords

Mosfet n-channel Small Signal MOSFET

Price & Stock Powered by