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    DSASW00135400.pdf

    • PROCESS CP318V Small Signal Transistor NPN - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 7.1 MILS ± 0.6 MILS
    • Original
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    DSASW00135400.pdf preview
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    CP318V MPS455
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