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Scans-0072502.pdf
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TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES â High Power PldB=48.0dBm at 1.96GHz â High Power Gain GldB=13dB at 1.96GHz RF PERFORMANCE SPECIFICATIONS (Ta=25°C) CHARACTERIST
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ECAD Model
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User Tagged Keywords
tpm1919
TPM1919-60