DSAH00127833.pdf by Cree

Partial File Text CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree's CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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