DSAE0019917.pdf by Toshiba

Partial File Text 2SC5076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC5076 High-Current Switching Applications. · Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (
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2SA1905 2SC5076 C5076

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