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    DSA00288943.pdf

    • Toshiba
    • GT80J101B TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101B High Power Switching Applications Unit: mm · Enhancement mode type · High speed: tf = 0.40 µs (
    • Original

    DSA00288943.pdf preview Download Datasheet

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    80J101 GT80J101B
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