The Datasheet Archive
Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
Search
Scans-0071944.pdf
by Not Available
Partial File Text
TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES: â HIGH POWER p1dB = 295 dBm at f = 8 GHz m HIGH GAIN MdB = 7.5 dB at f = 8 GHz MICROWAVE POWER GaAs FET S8836A â SUITABLE FOR
Datasheet Type
Scan
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Obsolete
Scans-0071944.pdf
preview
Download Datasheet
User Tagged Keywords
S8836A
Price & Stock Powered by