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Scans-0071940.pdf
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TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET JS8853-AS FEATURES: â HIGH POWER PldB = 28.0 dBm at f = 15 GHz â HIGH GAIN G1dB = "7.0 dB at f = 15 GHz RF PERFOR
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JS8853-AS