This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
TOSHIBA
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES:
â HIGH POWER PldB=24dBm at f = 15 GHz
â HIGH GAIN
GldB = 8 dB at f = 15 GHz
MICROWAVE POWER GaAs FET
JS8851-AS
SUITABLE FOR Ku-
