DSA2IH00101076.pdf by Not Available

Partial File Text MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F0904A L, S BAND POWER GaAs FET DESCRIPTION The M G F 0 9 0 4 A . GaAs F ET w ith an N-channel sc h o ttk y gate, is designed fo r use in U H F band am
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