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    • MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F X 38V 1722 1 1 . 7 - 12.2G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F X 3 8 V 1 7 2 2 is an in te rn a lly im pedance m atched GaA s
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