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    DSA2IH00100591.pdf

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    • MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B , medium-power GaAs FET with an Nchannel Schottky gate, is designed for use in S to X band amplifie
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    DSA2IH00100591.pdf preview Download Datasheet

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