DSAIH00068401.pdf

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Partial File Text M/A-C'OM' SEMICONDUCTOR _ c i3 DE |St.45E])M 00L30 S MA4F001 Series ¡88 Gallium Arsenide Field ^ Effect Transistors Description a % (S t su* mi IP I© i The MA4F001 series o
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ECAD Model

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2.5 GHz RF power transistors with s-parameters 5218 chip ic Dielectric Resonator Oscillator DRO high power FET transistor s-parameters MICROWAVE ASSOCIATES pa 3029 b RF transistors with s-parameters

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