DSA2IH0099123.pdf by Not Available

Partial File Text MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF4511D SU PER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 5 1 1 D super-low -noise HEMT (High Electron M ob ility Transistor) is designed fo r use in K b
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RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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