DSA00397782.pdf by Hitachi Semiconductor

Partial File Text 4AK22 Silicon N-Channel Power MOS FET Array Application High speed power switching Features · Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5 A R DS(on) 0.55 , VGS = 4 V, I D = 1.5 A
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Transferred
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2SK1254 4AK22 SP-10

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