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Partial File Text ï»¿TOSHIBA 2SC2669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE (PCT PROCESS) 2 S C 2 6 6 9 HIGH FREQUENCY AMPLIFIER APPLICATIONS. High Power Gain : Gpe = 30dB (Typ.) (f= 10.7MHz) Recomme
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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