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    ScansEX27717.pdf

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    • FLK017XP - GaAs FET & HEMT Chips FEATURES • High Output Power: P1dB = 20.5dBm(Typ.) • High Gain: G1dB = 8.0dB(Typ.) • High PAE: r^ = 26%(Typ.) • Proven Reliability DESCRIPTION The F
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    FLK017XP GaAs FET HEMT Chips
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