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    • ELECTRON DEVICE j-, MOS FIELD EFFECT TRANSISTOR 2SJ166 P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS (Unit : mm) 2.8 ±0.2 3- £3- 1.5 0.65i8:ìs / Marking 1. Source 2
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    2SJ166 2SK1132 p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING marking
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