DSARS00304.pdf

Partial File Text CES2301 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES D -20V , -2.4A , RDS(ON)=95m (typ) @VGS=-4.5V. RDS(ON)=130m (typ) @VGS=-2.5V. High dense cell design for low
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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