DSAE0013782.pdf by Infineon Technologies

Partial File Text PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS® FET intended for class AB base station applications in the
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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