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    DSAE0013608.pdf

    • Infineon Technologies
    • IPB08CNE8N G IPI08CNE8N G OptiMOS®2 Power-Transistor IPP08CNE8N G Product Summary Features V DS 8.2 m ID · Excellent gate charge x R DS(on) product (FOM) V R DS(on),m
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    DSAE0013608.pdf preview Download Datasheet

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    08CNE8N IPP08CNE8N PG-TO220-3

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