DSAE0013592.pdf

Manufacturer Infineon Technologies
Partial File Text IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS®2 Power-Transistor Product Summary Features V DS 6.2 m ID · Excellent gate charge x R DS(on) product (FOM) V R DS(on),m
Datasheet Type Original
ECAD Model
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