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    DSAE0013579.pdf

    • Infineon Technologies
    • IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS®2 Power-Transistor Product Summary Features V DS 85 V · N-channel, normal level R DS(on),max (TO 263) 5.1 m ID 10
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    DSAE0013579.pdf preview Download Datasheet

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    051ne8n IPP054NE8N PG-TO220-3

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