DSA00282205.pdf by Mitsubishi

Partial File Text MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifi
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete
Price & Stock
Powered by Findchips

DSA00282205.pdf preview

Download Datasheet

User Tagged Keywords

MGF1601 MGF1601B