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DSAE0013445.pdf
by Infineon Technologies
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IPP114N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS · Excellent gate charge x R DS(on) product (FOM) 120 V R DS(on)max · N-channel, normal level 11.4
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114N12N
IPP114N12N3
IPP114N12N3 G
PG-TO220-3