DSAE0013212.pdf by Infineon Technologies

Partial File Text IPP180N10N3 G IPI180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS 18 m ID · Excellent gate charge x R DS(on) product (FOM) V R DS(on),max TO-263 ·
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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180N10 180N10N IPI180N10N3 IPP180N10N3 PG-TO220-3

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