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DSAZIHA2X00038708.pdf
by GeneSiC Semiconductor
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Die Datasheet High Temperature Silicon Carbide Power Schottky Diode GB20SHT12-CAL VRRM o IF @ 25 C QC = = = 1200 V 30 A 58 nC Features ï· ï· ï· ï· ï· ï· ï· ï·
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