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    DSA0041461.pdf

    • Alliance Semiconductor
    • AS4LC256K16EO ® 3.3V 256K X 16 CMOS DRAM (EDO) Features · EDO page mode · 5V I/O tolerant · 512 refresh cycles, 8 ms refresh interval · Organization: 262,144 words × 16 bits · High speed
    • Original
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