DSAE0011841.pdf by Infineon Technologies

Partial File Text PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS ® FET intended for class AB base station applications in
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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