DSAE0011840.pdf by Infineon Technologies

Partial File Text PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS ® FET intended for class AB base station applications in th
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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