Scans-0062135.pdf
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- TOSHIBA 1SV323 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 3 2 3 TCXO/VCO Unit in mm ⢠High Capacitance Ratio : C1V/C4V = 4.3 (Typ.) ⢠Low Series Resistance : rs = 0.4 Cl (Typ.) â
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