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    • TOSHIBA 1SV322 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 3 2 2 TCXO/VCO Unit in mm • High Capacitance Ratio : C1V/C4V = 4.3 (Typ.) • Low Series Resistance : rs = 0.4 Cl (Typ.) â€
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    1SV322
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