DSA00389694.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET TIM7785-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level HIGH POWER P1dB=45.
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
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