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DSA00389570.pdf
Manufacturer
Toshiba
Partial File Text
MICROWAVE POWER GaAs FET TIM1112-8 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 11.7GHz to 12.7GHz HIGH GAIN HERMET
Datasheet Type
Original
ECAD Model
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TIM1112-8
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