The Datasheet Archive
Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
Search
DSA00389569.pdf
Manufacturer
Toshiba
Partial File Text
MICROWAVE POWER GaAs FET TIM1112-4 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER BROAD BAND INTERNALLY MATCHED FET P1dB=36.5dBm at 11.7GHz to 12.7GHz HIGH GAIN HERMET
Datasheet Type
Original
DSA00389569.pdf preview
Download Datasheet
User Tagged Keywords
TIM1112-4
Price & Stock Powered by
Findchips