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    DSA00389568.pdf

    • Toshiba
    • MICROWAVE POWER GaAs FET TIM1112-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER BROAD BAND INTERNALLY MATCHED FET P1dB=33.5dBm at 11.7GHz to 12.7GHz HIGH GAIN HERMET
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    TIM1112-2

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