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    DSA00389559.pdf

    • Toshiba
    • MICROWAVE POWER GaAs FET TIM1011-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=42.0dBm at 10.7GHz to 11.7GHz HIGH GAIN G1dB=7.0dB at 10.7GHz to 11.7GHz BROAD BAN
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