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DSAEDA0002818.pdf
by Toshiba
Partial File Text
JDH3D01S TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01S For wave detectio
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n à Unit: mm Small package Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol R
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Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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