DSACRA00007859.pdf by Mitsubishi

Partial File Text < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifier
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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GD-32 HEMT marking K low noise Micro-X marking "K" MGF4963B MGF4963BL

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