DSACRA00007856.pdf by Mitsubishi

Partial File Text < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifier
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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GD-32 low noise Micro-X marking "K" MGF4941CL RO4350B RO4350B max current RO4350B ROGERS transistor "micro-x" "marking" 3

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