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DSA00389266.pdf
Manufacturer
Panasonic
Partial File Text
Power F-MOS FETs 2SK2129 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 50ns q No second
Datasheet Type
Original
ECAD Model
Part Details
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User Tagged Keywords
2a DIODE
2SK2129