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    DSA00389266.pdf

    • Panasonic
    • Power F-MOS FETs 2SK2129 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 50ns q No second
    • Original
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    2a DIODE 2SK2129
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