DSACRA00005894.pdf
- Renesas Electronics
- Preliminary Datasheet RJK6018DPM 600V - 30A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.2 typ. (at ID = 15 A, VGS = 10 V, Ta = 25C) Low leakage current High s
- Original
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