DSADIGA000104670.pdf by California Eastern Laboratories

Partial File Text HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES â¢ Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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transistor marking M04 GHZ