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    DASF0031790.pdf

    • Toshiba
    • 1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switching Unit: mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : I
    • Original

    DASF0031790.pdf preview Download Datasheet

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    1SS396
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