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    Scans-0055467.pdf

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    • JoWtX^Vi devices.INC. PRODUCT CÁTALO© N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS Drain-source VoIt.(1) VDSS 200 Vdc Dra in-Gate Vo1tage (RGs=1.0Mn) (l)
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