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    DSASW0093685.pdf by Chino-Excel Technology

    • CEM8206 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V, 6A, RDS(ON) = 20m @VGS = 4.5V. RDS(ON) = 30m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON)
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