DSA00516771.pdf by International Rectifier

Partial File Text AN-983 (v.Int) IGBT Characteristics (HEXFET® is a trademark of International Rectifier) Topics covered: How the IGBT complements the MOSFET Silicon structure and equivalent circuit Conduct
Datasheet Type Original
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1000C 10a 400v power amplifier bipolar transistor 7A, 100v fast recovery diode all transistor IRF 310 AN-983 AN-983 equivalent AN983 Application of irf840 BUX98 conductivity meter circuit DATA SHEET OF IGBT datasheet irf840 mosfet Equivalent transistors for IRGPC50U high voltage darlington 233 IGBT loss calculate INT-944 INT-990 INT990 international rectifier D2 irf 100v NPN 100A IRF 949 IRF P CHANNEL MOSFET 10A 100V IRF840 IRGBC20U irgbc20u Similar IRGBC40S IRGBC40U LOW FORWARD VOLTAGE DROP DIODE RECTIFIER mosfet 10a 600v N CHANNEL MOSFET 10A 1000V N-Channel jfet 400V 1A NPN Transistor 10A 400V NPN Transistor 5A NPN Transistor 600V 5A TO-220 P channel 600v 20a IGBT P Channel Power MOSFET IRF PN channel MOSFET 10A pnp 400v 10a pnp 500v pnp darlington to-220 10a sec irf840

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