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    DSA00385105.pdf

    • California Eastern Laboratories
    • NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (150 mW MIN) NX7361JB-BC FEATURES DESCRIPTION ยท HIGH OUTPUT POWER: Pf = 150 mW at IFP = 1000 mA PW
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