DSASL00157639.pdf

Manufacturer Infineon Technologies
Partial File Text PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS ® FET intended for class AB base station applications in th
Datasheet Type Original

DSASL00157639.pdf preview Download Datasheet

User Tagged Keywords

4.7pF Potentiometer C17-R2 elna 50v elna ds LM7805 LM7805 05 lm7805 datasheet LM7805 M SMD LM7805 smd LM7805 smd 8 pin marking us capacitor pf l1 P221E PTF180101M SMD TRANSISTOR MARKING l4 smd transistor marking l7 smd transistor marking wa TPSE106K050R0400 transistor smd marking ND

Price & Stock Powered by