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    DSASW0086383.pdf

    • STMicroelectronics
    • STGB35N35LZ STGP35N35LZ EAS 450 mJ, 345 V, internally clamped IGBT Features TAB Low threshold voltage Low on-voltage drop High voltage clamping feature Gate and gate-em
    • Original
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    DSASW0086383.pdf preview Download Datasheet

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    GP35N35LZ STGB35N35LZ STGB35N35LZ-1 STGB35N35LZT4 STGP35N35LZ
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